The photoluminescence is investigated of n-type glow-discharge prepared a-Si:H, where the doping is varied by in- and out-diffusion of Li. The appearance of a luminescence band at 0.8 eV is due to the decrease of the high-energy (1.2 eV) band which is explained by generation of defects. The intensity of the high-energy band can be restored by annealing without changing the doping state of the Si films.
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Spies et al. (1980) studied this question.
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