Physical properties of undoped and doped hydrogenated amorphous silicon carbide

A systematic study on the basic characteristics of p-type a-SiC:H films doped with B 2 H 6 and n-type doped with PH 3 is presented. The effect of doping on the optical and electrical properties of the films has been examined. The results obtained on energy gap, spin density, Urbach energy and integral of excess absorption suggest that the phosphorus dopant atoms introduce fewer additional defects than does boron. The difference in the behaviour of the two types of doping has been attributed to the chemistry of boron and phosphorus.