Answers are grounded in this paper and cite their sources.
Thermoelectric power and conductivity measurements on As-doped a-Si:H:F have been combined with exact computations of conductivity and thermopower to determine the midgap density of states (1016 eV−1 cm−3) and maximum mobility (11 cm2 V−1 sec−1). The mobility edge is found to lie significantly deeper in the gap than in a-Si:H.
No takes yet. Share an insight, caveat, or question.
Nielsen et al. (1980) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: