A technique has been developed for measuring the Hall coefficient which is based on the invariance of the antisymmetric part of the resistivity tensor with respect to rotational transformation. This technique permits the Hall coefficient for any orientation to be determined on one single crystal. In this paper it has been applied to copper. The results thus obtained are used for the calculation of the Hall conductivity which, in turn, yields information on characteristic properties of the Fermi surface.
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Saeger et al. (1969) studied this question.
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