A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 μm and fabricated on material grown entirely by LP-MOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.
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Blondeau et al. (1984) studied this question.
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