The mechanisms for the formation of the systems 〈Au/InP(100)〉 and 〈Au/InSb/InP(100)〉 are connected with their electrical properties. By using quantitative AES, a precise knowledge of the atomic mechanisms allows us to perform the desired component such as a Schottky diode. The best results are obtained for the 〈Au/heated InSb/InP〉 system with a barrier height of 0.7 eV.
No takes yet. Share an insight, caveat, or question.
Bideux et al. (1993) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: