Soft-x-ray photoemission measurements of ultrahigh vacuum-cleaved InP-metal interfaces reveal two classes of microscopic chemical structure. Reactive metal (Al,Ni)-InP interfaces display cation-rich outdiffusion, atomically abrupt microstructure, and low Schottky-barrier height (φSB), while unreactive metal (Au, Cu)-InP interfaces exhibit anion-rich outdiffusion, diffuse microstructure, and high φSB . For InP and other III-V compound semiconductor-metal junctions, chemical bond strength dominates local atomic structure and the type of electrically-active sites produced near the interface. These features can be controlled extrinsically by Al or Ni interlayers.
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Brillson et al. (1981) studied this question.
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