The properties of Au/thermal oxide/p-InP metal-interfacial layer-semiconductor (MIS) junctions have been investigated. Thin InP thermal oxides are stable and in the dark are positively charged so as to increase the band bending and reduce the forward leakage currents in MIS junctions. Under illumination, photogenerated electrons are trapped in the oxide or near the oxide/InP interface such that MIS junctions exhibit photosuppression and hysteresis effects.
No takes yet. Share an insight, caveat, or question.
Eberspächer et al. (1985) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: