The solid‐vapor equilibria in the Zn‐Se‐Te system are examined under conditions of near‐stoichiometry and under excess chalcogen pressure. It is shown that the best conditions for growing ZnSe x Te 1 − x crystals of uniform composition occur in the presence of intentionally added excess Te. The crystallographic and compositional characteristics of doped and undoped ZnSe x Te 1 − x crystals grown in vacuum and in the presence of excess Te are described.
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Aven et al. (1968) studied this question.
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