The reactivity of group IV B semiconducting layered compounds (ZrSe2 and ZrS2) has been investigated with surface science techniques (XPS, UPS, and LEED). The surface has been analyzed after chemical and electrochemical oxidation. Type and concentration of oxidation products have been determined. An increased reactivity compared to group VI B layered chalcogenides is found. The semiconductor/electrolyte interface is simulated by adsorption of halogens onto UHV cleaved (0001) surfaces. A light induced reaction of the interface is observed in contrast to the ideal Schottky type behaviour found for MoSe2 for which surface photovoltages have been obtained. The differences in reactivity are discussed in relation to the different electronic structure of the chalcogenides (valence band edges of metal d‐character for MoSe2 and chalcogenide p‐character for ZrSe2 and ZrS2).
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Jaegermann et al. (1988) studied this question.
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