The influence of argon impurities on the optogalvanic signal induced on neon lines was studied experimentally and theoretically. In particular, the amplitude and sign of the optogalvanic signal due to resonance pumping of the 609.6 nm line of neon were found to be greatly influenced by Penning ionisation of argon atoms by neon atoms excited to one of the 1s states. The model describes the transient effects found experimentally and the pressure and discharge current dependences of stationary optogalvanic signal values.
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Labat et al. (1988) studied this question.