A surface region about 0.22 μm thick of cadmium-annealed undoped n-type CdTe single crystal was converted to p type by implantation of 60-keV As+ ions followed by a cadmium annealing. The electrical properties of the p-type layer were measured as well as the photovoltaic properties of the p-n junction formed in this way. For illumination by sunlight an open-circuit voltage of 0.84 V was found in a cell with a solar efficiency of 3.0%. The parameters of the junction were determined using a model designed to describe the spectral response of the cell.
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Chu et al. (1978) studied this question.
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