Analysis and modelling of plasma enhanced CVD reactors. II. Model improvement and systematic use

For pt.I see ibid., vol.3, p.72-9 (1994). A kinetic analysis is performed using a simple process model. The two-dimensional model has been simplified to shorten calculation times. The simpler model has then been used to test several changes, linked to the role of disilane, to kinetic constants and, finally, to the electron-silane interaction branching coefficient until a good agreement between experimental data and calculated values is obtained. The most important conclusion reached is that a good fit between calculated and experimental results requires a considerable change in the value of branching for radical production (SiH3/SiH2). The best simple code has then been used to perform a sensitivity analysis on the influence of a few important operating variables.