Reflection high-energy electron diffraction (RHEED) studies have been performed on epitaxial (001)ZnSe surfaces. The phase diagram on the surface grown by molecular beam epitaxy (MBE) was obtained by observing changes of RHEED patterns as a function of beam flux ratio and substrate temperature. The desorption time of Se atoms and the adsorption time of Zn atoms were also obtained by measuring the time taken for the surface structure to change from a Se-stabilized surface to a Zn-stabilized one. The activation energy for the desorption of Se atom from a Se-stabilized surface was 1.02 eV.
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Menda et al. (1987) studied this question.
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