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We report for the first time lasing action in the InNAsP-InGaAsP material system. Dramatic improvement in lasing action in a microdisk cavity was observed at elevated temperature up to 70/spl deg/C, which is about 120/spl deg/C higher than that of InGaAs-InGaAsP microdisk. This resulted in the first optically pumped InNAsP-InGaAsP microdisk lasers capable of above room-temperature lasing. The improvement of lasing temperature can be attributed to a large conduction band offset between the quantum well and barriers in the InNAsP-InGaAsP material system.
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Bi et al. (1997) studied this question.
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