A technology for the fabrication of GaAs devices for operation at 300 degrees C is presented. The high reliability of the devices is mainly due to diffusion barrier of WSi/sub 2/ in the ohmic contacts and to an optimized Si/sub 3/N/sub 4/ passivation. It is shown that MESFETs produced with this technology demonstrate a remarkable stability of their characteristics, even after 100 h of storage at 300 degrees C, and only a little degradation after 100 h at 400 degrees C.>
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Fricke et al. (1989) studied this question.
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