Charge Scattering and Mobility in Atomically Thin Semiconductors

Atomically thin semiconductors, e.g., MoS₂, may be an alternative to silicon in transistor electronics, but their electron mobilities as measured are apparently rather low. A theoretical study shows that the low mobilities are caused by the scattering of electrons by charged impurities and points to high-κ dielectric coatings as a way to boost the mobilities of high-impurity samples.