Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxy

This paper compares Hall-effect measurements combined with rapid thermal annealing (RTA) and low-temperature photoluminescence (4-K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures. The Hall-effect measurements with the RTA were used to determine the optimized growth temperature. 4-K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.