The design of radiation-hardened ICs for space: a compendium of approaches

S.E. Kerns; B.D. Shafer; Leonard R. Rockett; J.S. Pridmore; D.F. Berndt; Nicolaas van Vonno; Frank E. Barber

doi:10.1109/5.90115

January 1, 1988Proceedings of the IEEE

The design of radiation-hardened ICs for space: a compendium of approaches

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Key Points

Summarize the physical mechanisms of space radiation damage on microelectronic devices and evaluate circuit-level design techniques for developing radiation-hardened integrated circuits.
Reviewed diverse fabrication technologies, including bulk/epi CMOS, silicon-on-insulator, current-mode logic, emitter-coupled logic, and gallium arsenide heterojunction MESFETs.
Examined direct radiation effects on device parameters across digital, high-speed, and analog circuit architectures.
Assessed circuit-hardening methodologies alongside computer simulation techniques for modeling radiation phenomena in integrated microelectronics.
Identified critical radiation-induced parameter shifts specific to distinct circuit classes and semiconductor material configurations.
Outlined targeted circuit-hardening strategies and design examples for integrated subsystems, including operational amplifiers and analog-to-digital converters.
Established computer simulation frameworks to accurately predict radiation responses and guide robust integrated circuit layout.

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Implication

Technical review reveals design strategies for radiation-hardened integrated circuits in space systems, highlighting multi-technology approaches to prevent radiation-induced device degradation.

Abstract

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ICs.>

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Kerns et al. (1988) studied this question.

synapsesocial.com/papers/6a8af8c4fd375bdc37f4470c https://doi.org/10.1109/5.90115

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The design of radiation-hardened ICs for space: a compendium of approaches

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The design of radiation-hardened ICs for space: a compendium of approaches

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