We have achieved down to 140 nm diameter carbon nanotube via interconnects with both new single and dual damascene processes on 200 mm silicon wafers. High density 5 × 1010nanotube/cm2is obtained. The validity of these two new processes has been checked by performing electrical measurements. At high bias, a low resistance of 20 Ω has been reached for a 300 nm diameter via interconnect. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Coiffic et al. (2008) studied this question.
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