Very abrupt doping structures grown by Si molecular beam epitaxy are investigated by spreading resistance (SR) analysis. The corresponding SR profiles reveal strong carrier spilling effects. To calculate the ‘‘on bevel’’ carrier concentrations of these structures, a formalism is developed which is based on the Poisson–Boltzmann equation. Qualitative agreement between the model calculation and the SR data is established.
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Casel et al. (1987) studied this question.
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