Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ∼0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ∼0.44 emu/g (on quartz) to ∼1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.