The optical properties and the surface morphologies of single-ion-beam sputtering (SIBS) and dual-ion-beam sputtering (DIBS) depositions of titanium oxide films are investigated and compared. In the DIBS process, the ion-assisted deposition by the voltage of a low ion beam ranged from 50 to 300 V at a 0% and 44% oxygen percentage. Cosputtering with materials of Si, SiO(2) (fused silica), and Al is also utilized in SIBS to improve amorphous-structure film. For the low-absorption and surface-roughness film, the optimum deposition condition of DIBS and postdeposition baking temperature for SIBS and DIBS are essential to the process.
No takes yet. Share an insight, caveat, or question.
Hsu et al. (1998) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: