Oxidation state selected titanium oxide thin films (TinO2n−1; n=1–∞) were deposited by a combination of a pulsed molecular beam source and an electron beam metal source. The oxidation state of titanium was controlled solely by the number of gas pulses and the temperature of a substrate. The conditions for depositing crystalline TinO2n−1 thin films were determined.
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Nozoye et al. (1989) studied this question.
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