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TiO2 films are obtained by rf sputtering in an atmosphere of argon—oxygen mixture and the influence of oxygen deficiency in the TiO2 films on their photoconductive properties is studied. All the films display moderate photoconductivity in the near UV region. A broad single peak is observed around 360 nm in the spectral response of the photocurrent, which corresponds approximately to the absorption edge. Thermally stimulated currents are also measured to study trapping levels in the TiO2 films. It is concluded that the defect concentrations in the TiO2 films decrease with increasing oxygen concentration in the sputtering gas.
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Manabu Takeuchi (1979) studied this question.
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