We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.
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Hegarty et al. (1998) studied this question.
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