Passive‐Oxidation Kinetics of High‐Purity Silicon Carbide from 800° to 1100°C

Highly textured chemically vapor‐deposited silicon carbide (CVD‐SiC) thick films were oxidized and compared to single‐crystal SiC and single‐crystal silicon. The oxidation rates of the (111) face of the cubic CVD‐SiC were the same as those of the (0001) face of the single‐crystal SiC. Similarly, the opposite faces of the two materials, () and (000), also oxidized at nominally the same rates. The () and (000) faces oxidized much faster than their opposite (lll)/(0001) faces. Ellipsometry measurements and kinetic results implied that differences existed between the oxides that grew on the opposite faces. A regression method was developed to analyze the oxide thickness versus time versus temperature behavior of the specimens simultaneously. This technique was compared to typical methods for analyzing temperature‐dependent processes and estimated temperature‐ dependent parameters (e.g., activation energy) and their errors more accurately.