Fully epitaxial Fe(001)∕Fe3O4(001)∕MgO(001)∕Co micron-sized magnetic tunnel junctions have been elaborated on MgO(001) substrates. X-ray reflectivity and high-resolution transmission electron microscopy revealed a good quality and epitaxial growth of the stack with abrupt interfaces. The magnetotransport measurements exhibit a large negative tunneling magnetoresistance (TMR) value for magnetic tunnel junctions including an Fe3O4 layer and a MgO tunnel barrier (−8.5% at 300K and −22% at 80K). Moreover, the sign of the TMR changes with the applied bias. We discuss here the structural quality of the samples and the transport measurement results.
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Greullet et al. (2008) studied this question.
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