Reflection Raman scattering has been used to study thermally grown air-oxidized films on InP. Elemental red phosphorus is detected in films grown between 350 and 550 °C. At oxidation temperatures exceeding 550 °C, InPO4 is observed with some In2O3 also present as a minor film constituent.
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Schwartz et al. (1980) studied this question.
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