1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate

In 2 O 3 : Er films were synthesized on silicon substrates by the RF magnetron sputter deposition. The solid solution ((In 1- x Er x ) 2 O 3 ) is formed here. The 1.534 µm erbium electroluminescence is observed by the current through the investigated heterostructure substrate- n -Si 2 O 3 : Er-film-contact. The Er excitation model by the electron-hole recombination is proposed as follow. The electron current flows at the indium oxide conduction band. And the hole current flows at the channel in the middle of the In 2 O 3 : Er bandgap. The hole channel is formed by the defect state density spreading from the valence band edge into the bandgap. Therefore the electron-hole recombination energy is lower than the indium oxide bandgap and equals to the 1.56 eV. Then the electron-hole recombination excites in resonance the third excited state of Er 3+ 4 I 9/2 (1.53 eV). Then the nonradiative relaxation to the first excited state 4 I 13/2 (0.81 eV) occurs. And finally the 1.534 µm radiative emission into ground state 4 I 15/2 occurs.