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The performance of dual-band gap, double-junction amorphous silicon alloy-based solar cells in which the component cells have different degrees of current mismatch has been studied under annealed and light-soaked conditions. Using a profiled band gap amorphous silicon-germanium alloy in the bottom cell, a stabilized active-area efficiency of 11.16% has been achieved.
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Yang et al. (1992) studied this question.
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