Zero-net strained multilayer alternating tensile GaInP and compressive InAsP have been grown on (001)InP by metal-organic vapor-phase epitaxy. A structural analysis using transmission electron microscopy (TEM) is reported. A remarkably regular laterally modulated structure has been observed. GaInP- and InAsP-rich vertical zones alternate with a periodicity of 0.28 μm along the lateral [110] direction, thus balancing the mismatch along the [110] rather than the [001] growth direction. TEM experiments suggest that each vertical zone is partially elastically relaxed.
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Ponchet et al. (1994) studied this question.
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