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Compositional disordering of Si-implanted GaAs/Al0.5Ga0.5As superlattices, followed by rapid thermal annealing (RTA), is investigated by means of sputtering Auger electron spectroscopy (AES) and Raman spectroscopy. The disordering was found to take place in the Si-implanted superlattices with a dose of 1×1015 cm-2, annealed at 1000°C for 4 to 30 seconds, resulting in an Al0.25Ga0.75As alloy. The Raman spectra showed that this alloy had a higher quality as the implanted samples were annealed for longer periods of time.
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Uematsu et al. (1987) studied this question.
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