MBE grown GaAs–AlxGa1−xAs superlattice structure was investigated in terms of crystallography (x-ray diffraction and direct lattice-image observation by TEM) and optical properties (controllability of Eg, oppoiste Burstein shift, structure dependent refractive index and room-temperature exciton). New device properties are described for an MQW laser diode/waveguide. These include anisotropic gain, low absorption loss, and stable longitudinal mode oscillation under high-speed modulation. An MQW laser diode in the long wavelength region is presented, which is made using the GaSb–AlxGa1−xSb material system. Future prospects are also described.
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Hiroshi Okamoto (1985) studied this question.