The effects of bulk annealing on the electrical properties of an In-doped dislocation-free semi-insulating GaAs are investigated. The crystal is grown by a fully encapsulated Czochralski method using the vertical magnetic field. It was found that the EL2 concentration increases after isochronal bulk annealing for 5 h from 800 to 1100 °C. In addition, the activation efficiency of implanted Si was found to correlate to the annealing behavior of the defect.
No takes yet. Share an insight, caveat, or question.
Ōsaka et al. (1985) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: