Physical network simulation models of bipolar power devices strongly depend on an accurate description of the low-doped drift zone, because the behavior of the diffusion charge in this region governs the static and dynamic device characteristics. In this paper a one-dimensional modeling module for the drift zone is presented, which accounts for all important effects under high injection conditions: nonquasistatic ambipolar diffusion, temperature- and injection-level dependent scattering and recombination effects as well as impact ionization. When combined with well known expressions describing the rest of the respective structure, very accurate and CPU-time efficient network models can be implemented, that are suited for all applications including resonant modes (ZVS, ZCS, ZVT). The module is incorporated in a commercially available network simulator and used so far for modeling the IGBT, the high power diode and the GTO.>
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Metzner et al. (1994) studied this question.