Schottky barrier diodes have been fabricated using poly(3-hexylthiophene)(P3HT) as the semiconductor and indium as the metal. P3HT was doped with FeCl3 at room temperature to form a p-type semiconductor. The Schottky junctions of In on FeCl3-doped P3HT using pressure contact exhibit rectification ratios ranging from 104:1 to 106:1 at a bias of ±1 V.
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Kuo et al. (1993) studied this question.
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