Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors

Low temperature transport measurements in ultra-short silicon field effect transistors with deliberately nonoverlapping gates show periodic Coulomb blockade oscillations. Despite its relatively small charging energy (/spl ap/2 meV) this single-electron effect is promising because it is controlled by geometrical confinement between the nonoverlapped extensions acting as tunnel barriers. Remarkably these single electron devices are excellent field effect transistors at room temperature.