Silicon co-integration offers compelling scale-up opportunities for quantum computing. In this framework, cryogenic temperature is required for the coherence of solid-state quantum devices. This paper reports the characterization of an nMOS quantum-dot dedicated structure below 100 mK. The device under test is built in thin silicon film fabricated with 28 nm high-k metal gate ultra-thin body and ultra-thin buried oxide advanced CMOS technology. The MOS structure is functional with improved performances at cryogenic temperature. The results open new research avenues in CMOS co-integration for quantum computing applications within the FD-SOI platform.
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Galy et al. (2018) studied this question.