The electrical properties and the IR absorption spectra of amorphous films made by the glow-discharge of a SiH4–N2–H2 gas mixture have been investigated as a function of the nitrogen to silane mole fraction. Efficient doping is possible in these amorphous films. The highest resistivity obtained is 1×1014 Ω·cm, which is sufficient to be used as a photoreceptor of electrophotography.
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Watanabe et al. (1982) studied this question.
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