Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors

The short-channel characteristics of variable-body-factor fully-depleted silicon-on-insulator (FD SOI) metal–oxide–semiconductor field-effect-transistors (MOSFETs), which we previously have proposed, are investigated by two-dimensional device simulation. It is found that, although the advantages of dc characteristics diminish in the short channel regime, improved ac characteristics can be obtained by the reduction in parasitic drain capacitance. The optimization of device parameters for variable-body-factor FD SOI MOSFETs is also discussed.