Controlling the spin and valley degeneracy splitting in monolayer MnPSe 3 by atom doping

a valley splitting of larger than 20 meV and a spin splitting of larger than 100 meV can be achieved simultaneously. The doping-induced spin and valley splitting is attractive for spintronics and valleytronics as it creates differences in various energy scales between valleys and between spins, which will facilitate the access and manipulation of the valley and spin degrees of freedom by electrical gating in addition to optical pumping.