Potentialities of Solid Phase Intergrowing (SPI) of crystals [5] in conformity with the investigations of HTSC are discussed. In particular the application of SPI for creation of dielectric crystalline substrates containing model boundaries (low- or high-angle, single or multiple) perpendicular to their surfaces is analyzed. Both HTSC film structures with a single boundary of a given crystallographic orientation and plain shape, and systems of such boundaries in parallel rows or with triple joints are constructed on a base of this type substrates.
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Степанцов et al. (1991) studied this question.
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