Channeling profiles of 5–200 keVB+, 100–500 keV P+ and 40–300 keV As+ implanted near <100> and <110> axes in crystal silicon are calculated using the binary collision approximation code CRYSTAL. Calculated profiles are compared to carefully chosen experimental ones. Also, high dose phosphorus profiles with damage accumulation are compared to published experimental data.
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Chakarov et al. (1994) studied this question.
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