The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy has been investigated over a range of substrate temperature from 500°C to 700°C. Low temperature photoluminescence from single quantum wells less than 150Å in width has been observed at low excitation levels. Evidence of a graded heterostructure interface was observed in samples grown at higher substrate temperatures.
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Shealy et al. (1983) studied this question.
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