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Electron-gun evaporated a-Si has been doped with large amounts (up to 12 at.%) of molecular hydrogen with no external dissociation facilities required. The infrared transmission spectra taken from these films show a sole peak in the Si—H x stretching region at 2085 cm−1, indicating a bonding type hitherto associated with SiH2-type grouping. The room-temperature electrical conductivity exhibits a remarkable decrease of six orders of magnitude from 10−4 to 10−10 (Ω cm)−1 on annealing and is thermally activated above 100°C with an activation energy of 0·7 eV.
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Dellafera et al. (1982) studied this question.
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