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December 1, 1983IEEE Transactions on Electron Devices

Theoretical analysis on threshold characteristics of surface-channel MOSFET's fabricated on a buried Oxide

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YŌYasuhisa ŌmuraKansai UniversitySNSatοru NakashimaInstitute for Laser TechnologyKIK. IzumiMitsubishi Electric (Japan)

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Ōmura et al. (1983) studied this question.

synapsesocial.com/papers/6a8bad00f19228bbb2fb5a83https://doi.org/10.1109/t-ed.1983.21427
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