Study of the Thin Film Interface Aluminium–Tellurium

The thin film interface aluminium–tellurium is studied by (I – t), (I – U), and electron spectroscopy analysis (XPS). Electron spectroscopy analysis demonstrates that after air exposure of the samples, the rapid increase of the contact resistance is due to the formation of a continuous aluminium oxide thin film at the Al/Te interface. (I – t) and (I – U) measurements show that before air exposure the superposition of tellurium on aluminium leads to the slow formation of a compound. After exposure of the samples to air, aluminium oxide formation at the interface occurs.