Self-consistent model of transport in quantum well tunneling structures

We present a fully self-consistent model for the current-voltage characteristic of quantum well tunneling structures. Our approach is based on the independent particle approximation and incorporates both screening of the carrier potential and the response from the contacts. It is shown that a self-consistent treatment of charge supply from the contacts is essential for meaningful description of the system far from equilibrium. Results are presented for GaAs-AlGaAs double-barrier structures. Compared to standard calculations, this approach leads to strong quantitative changes in the I-V characteristic. In particular, peak and valley currents increase and current peaks shift to higher voltages. Doping effects on the I-V characteristic are discussed.