We have investigated the effect of complex barrier structures in double-barrier resonant tunneling diodes (DBRTDs). The largest room-temperature peak-to-valley current ratios (PVCRs) to date have been observed for AlGaAs/GaAs DBRTDs. PVCRs as high as 5.1 were observed in AlAs/GaAs DBRTDs with an Al0.14Ga0.86As chair barrier in the cathode. We attribute the improvement in the PVCRs to the chair barrier in the cathode which significantly reduces the valley current.
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Cheng et al. (1990) studied this question.
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